IXGN50N120C3H1 High-Speed PT IGBT

IXYS

Description

Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN50N120C3H1 VCES IC110 VCE(sat) = 1200V = .

📥 Download Datasheet

IXGN50N120C3H1 Datasheet Preview — Preview of IXGN50N120C3H1 PDF

Datasheet Specifications

Part number: IXGN50N120C3H1
Manufacturer: IXYS
File Size: 296.27 KB
Datasheet: IXGN50N120C3H1-IXYS.pdf
Description: High-Speed PT IGBT

Features

* z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBS

Applications

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V, Note 1 TJ = 125°C 2.6 VCE = VCES, VGE= 0V Characteristic Values Min. Typ. Max. 3.0 5.0 250 14 ±100 4.2 V μA mA nA V V z z z z z z Powe

IXGN50N120C3H1 Distributors

📁 Related Datasheet

IXGN50N60B IXGN50N60BD2 IXGN50N60BD3 IXGN200N60 IXGN200N60A IXGN200N60B

📌 All Tags

IXGN50N120C3H1 High-Speed IGBT IXYS

IXYS IXGN50N120C3H1-like datasheet