IXGN50N120C3H1 Datasheet, Igbt, IXYS

IXGN50N120C3H1 Features

• Igbt z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped

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Part number:

IXGN50N120C3H1

Manufacturer:

IXYS

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📄 Datasheet

Description:

High-speed pt igbt.

IXGN50N120C3H1 Application

• Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VG

TAGS

IXGN50N120C3H1

IXYS

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