IXGN200N170 Datasheet - IXYS

IXGN200N170 - High Voltage IGBT

High Voltage IGBT Advance Technical Information IXGN200N170 VCES = 1700V IC90 = 160A V CE(sat)  2.6V tfi(typ) = 535ns E Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting.

IXGN200N170 Features

* miniBLOC, with Aluminium Nitride Isolation

* International Standard Package

* Isolation Voltage 2500V~

* High Current Handling Capability Advantages

* High Power Density

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES

IXGN200N170-IXYS.pdf