* International standard package miniBLOC
* Aluminium nitride isolation - high power dissipation
* Isolation voltage 3000 V~
* Very high current, fast switching IGBT & FRED diode
* MOS Gate turn-on - drive simplicity
* Low collector-to-case capacitance
IXGN50N60BD3 Datasheet (152.97 KB)
IXGN50N60BD3
IXYS Corporation
152.97 KB
Hiperfast igbt.
HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.5 V = 150 ns BD2.
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