IXGN200N60 Datasheet - IXYS Corporation

IXGN200N60 HiPerFAST IGBT

HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES 600 V 600 V IC25 200 A 200 A VCE(sat) 2.5 V 2.7 V E www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 200 100 300 ICM = 100 @ 0.8 VCES 600 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C V~ V~ SOT-227B, miniBLOC E G VG.

IXGN200N60 Features

* International standard package miniBLOC (ISOTOP compatible) Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Low collector-to-case capacitanc

IXGN200N60_IXYSCorporation.pdf