* Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Advantages High Power Density Low Gate Drive Requirement Applications Power In
IXGN120N60A3D1 Datasheet (196.38 KB)
IXGN120N60A3D1
IXYS
196.38 KB
Igbt.
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to 5kHz switching
Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
SS.
📁 Related Datasheet
IXGN120N60A3 - IGBT
(IXYS)
GenX3TM 600V IGBT
IXGN120N60A3 IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to 5kHz switching
Symbol VCES VCGR VGES VGEM IC25 IC110 I
F110
I
CM
SS.
IXGN100N170 - High Voltage IGBT
(IXYS)
High Voltage IGBT
IXGN100N170
VCES = 1700V
IC90 = 95A
V CE(sat)
3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC .
IXGN200N170 - High Voltage IGBT
(IXYS)
High Voltage IGBT
Advance Technical Information
IXGN200N170
VCES = 1700V
IC90 = 160A
V CE(sat)
2.6V
tfi(typ) = 535ns
E
Symbol
VCES VCGR.
IXGN200N60 - HiPerFAST IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGN 200N60 IXGN 200N60A
VCES 600 V 600 V
IC25 200 A 200 A
VCE(sat) 2.5 V 2.7 V
E
..
Symbol VCES VCGR
Test Co.
IXGN200N60A - HiPerFAST IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGN 200N60 IXGN 200N60A
VCES 600 V 600 V
IC25 200 A 200 A
VCE(sat) 2.5 V 2.7 V
E
..
Symbol VCES VCGR
Test Co.
IXGN200N60A2 - IGBT
(IXYS)
IGBT
Optimized for Switching
up to 5 kHz
IXGN 200N60A2
VCES IC25 VCE(sat)
= 600 V = 200 A = 1.35 V
Preliminary Data Sheet
Symbol
Test Conditions.
IXGN200N60B - IGBT
(IXYS Corporation)
Advanced Technical Information
HiPerFASTTM IGBT
IXGN 200N60B
VCES IC25 VCE(sat)
= 600 V = 200 A = 2.1 V
E
Symbol VCES VCGR VGES VGEM IC25 IC90 I.
IXGN200N60B3 - Medium-Speed Low-Vsat PT IGBT
(IXYS)
GenX3TM 600V IGBT
Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching
IXGN200N60B3
Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC T.
