IXGN200N60B Datasheet - IXYS Corporation

IXGN200N60B IGBT

Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 2.4 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 200 120 400 ICM = 200 @ 0.8 VCES 600 -55 +150 150 -55 +150 V V.

IXGN200N60B Features

* International standard package miniBLOC

* Aluminium nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Very high current, fast switching IGBT

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive sim

IXGN200N60B_IXYSCorporation.pdf