IXGP12N60U1 Datasheet - IXYS Corporation

IXGP12N60U1 IGBT

Preliminary data Low VCE(sat) IGBT with Diode Combi Pack IXGP12N60U1 VCES IC VCE(sat) = = = 600 V 24 A 2.5 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 20 @ 0.8 VCES 100 -55 +150 150 -55 +150 V .

IXGP12N60U1 Features

* International standard package JEDEC TO-220 AB IGBT with antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM l l l l l l Symbol Tes

IXGP12N60U1_IXYSCorporation.pdf