* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low collector to tab capacitance (
IXGR60N60U1 Datasheet (141.23 KB)
IXGR60N60U1
IXYS Corporation
141.23 KB
Lowv-ce(sat) igbt.
www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back.
📁 Related Datasheet
IXGR60N60B2 HiPerFAST IGBT (IXYS)
IXGR60N60B2D1 HiPerFAST IGBT (IXYS)
IXGR60N60C2 IGBT (IXYS Corporation)
IXGR60N60C2D1 IGBT (IXYS Corporation)
IXGR60N60C3C1 GenX3 600V IGBT (IXYS)
IXGR60N60C3D1 High Speed PT IGBT (IXYS)
IXGR64N60A3 Ultra-low Vsat PT IGBT (IXYS)
IXGR6N170A High Voltage IGBT (IXYS)
IXGR120N60B IGBT (IXYS)
IXGR120N60C2 IGBT (IXYS)
