IXGR60N60U1 Datasheet - IXYS Corporation

IXGR60N60U1 LowV-CE(sat) IGBT

www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC100 ICM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms Maximum Ratings 600 600 ±20 ±30 75 60 200 ICM = 100 300 -55 ..+ 150 150 -55+ 150 V V V V A A A A W °C °C °C °C V g ISOPLUS247TM G C E Isolated back su.

IXGR60N60U1 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low collector to tab capacitance (

IXGR60N60U1_IXYSCorporation.pdf