IXGR60N60U1 LowV-CE(sat) IGBT

IXYS Corporation

Description

www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back.

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Datasheet Specifications

Part number: IXGR60N60U1
Manufacturer: IXYS Corporation
File Size: 141.23 KB
Datasheet: IXGR60N60U1_IXYSCorporation.pdf
Description: LowV-CE(sat) IGBT

Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low collector to tab capacitance (

Applications

* Solid state relays
* Capacitor discharge circuits
* High power ignition circuits Advantages
* Space savings (two devices in one package)
* Reduces assembly time and cost
* High power density C = Collector, TAB = Collector SSOA VGE = 15 V, TVJ = 125°

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IXGR60N60U1 LowV-CEsat IGBT IXYS Corporation

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