* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2010 IXYS CORPORATION, All Right
IXGR6N170A Datasheet (177.86 KB)
IXGR6N170A
IXYS
177.86 KB
High voltage igbt.
Advance Technical Information High Voltage IGBT (Electrically Isolated Tab) IXGR6N170A VCES = 1700V IC25 = 5.5A VCE(sat) ≤ 7.0V tfi(typ) = 32ns .
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