IXGR6N170A Datasheet - IXYS

IXGR6N170A High Voltage IGBT

Advance Technical Information High Voltage IGBT (Electrically Isolated Tab) IXGR6N170A VCES = 1700V IC25 = 5.5A VCE(sat) ≤ 7.0V tfi(typ) = 32ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient Maximum Ratings 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 5.5 A 2.5 A 18 A VGE = 15V, TVJ = 125°C, RG = 33Ω Clamped Inductiv.

IXGR6N170A Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2010 IXYS CORPORATION, All Right

IXGR6N170A-IXYS.pdf