IXGR60N60C3C1 Datasheet (IXYS)

IXGR60N60C3C1, GenX3 600V IGBT

www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode (Electrically Isolated Back Surface) IXGR60N60C3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Test Conditions TJ

IXGR60N60C3C1 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages z z High Powe