Datasheet Specifications
- Part number
- IXGR60N60C3C1
- Manufacturer
- IXYS
- File Size
- 218.43 KB
- Datasheet
- IXGR60N60C3C1_IXYS.pdf
- Description
- GenX3 600V IGBT
Description
www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode (Electrically Isolated Back Surface) IXGR60N60C3C1 VCES IC110 VCE(sat) tfi(typ) =.
Features
* z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages z z High PoweApplications
* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V, Note 1 TJ = 125°C 2.2 1.7 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 50 1 ±100 2.5 V μA mA nA V V z z z z z z zIXGR60N60C3C1 Distributors
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