* z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages z z High Powe
IXGR60N60C3C1 Datasheet (218.43 KB)
IXGR60N60C3C1
IXYS
218.43 KB
Genx3 600v igbt.
www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode (Electrically Isolated Back Surface) IXGR60N60C3C1 VCES IC110 VCE(sat) tfi(typ) =.
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