IXGR64N60A3 Datasheet - IXYS

IXGR64N60A3 Ultra-low Vsat PT IGBT

Preliminary Technical Information GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR64N60A3 Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 47A 1.35V Symbol VCES Test Conditions TJ = 25°C to 150°C Maximum Ratings 600 V ISOPLUS247TM (IXGR) E153432 VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC TL TSOLD VISOL Weight TJ = 25°C to 150°C, RGE = 1MΩ 600 V Continuous Transient TC = 110°C TC = 25°C, 1ms e VGE= 15V, TVJ = 125°C, RG = 3Ω t Clamped.

IXGR64N60A3 Features

* z Silicon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z 2500V electrical isolation Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min

IXGR64N60A3-IXYS.pdf