* z Silicon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z 2500V electrical isolation Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min
IXGR64N60A3 Datasheet (871.38 KB)
IXGR64N60A3
IXYS
871.38 KB
Ultra-low vsat pt igbt.
Preliminary Technical Information GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR64N60A3 Obsolete Part Number VCE.
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