* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V Electrical Isolation z Optimized for Low Switching Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement Applications z High Freque
IXGR60N60C3D1 Datasheet (222.05 KB)
IXGR60N60C3D1
IXYS
222.05 KB
High speed pt igbt.
GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VG.
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