IXGR60N60C3D1 Datasheet - IXYS

IXGR60N60C3D1 High Speed PT IGBT

GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 50/60 Hz, RMS, t = 1minute.

IXGR60N60C3D1 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V Electrical Isolation z Optimized for Low Switching Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement Applications z High Freque

IXGR60N60C3D1-IXYS.pdf