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IXRH50N100 Datasheet - IXYS Corporation

IXRH50N100 IGBT with Reverse Blocking capability

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C G C (TAB) IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N120 IXRH 50N100 Maximum Ratings ±1200 ±1000.

IXRH50N100 Features

* q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum cu

IXRH50N100_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXRH50N100

Manufacturer:

IXYS Corporation

File Size:

69.06 KB

Description:

Igbt with reverse blocking capability.

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