IXRH50N60, IXRH50N80 Datasheet - IXYS Corporation

IXRH50N60 - IGBT with Reverse Blocking capability

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N80 IXRH 50N60 Maximum Ratings ±800 ±600 ± 20 6

IXRH50N60 Features

* q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum cu

IXRH50N80_IXYSCorporation.pdf

IXRH50N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXRH50N60, IXRH50N80. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXRH50N60, IXRH50N80

Manufacturer:

IXYS Corporation

File Size:

66.08 KB

Description:

Igbt with reverse blocking capability.

Note:

This datasheet PDF includes multiple part numbers: IXRH50N60, IXRH50N80.
Please refer to the document for exact specifications by model.

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IXRH50N80 IGBT with Reverse Blocking capability IXYS Corporation