IXRA15N120 Datasheet - IXYS

IXRA15N120 - IGBT

Advanced Technical Information IXRA 15N120 IGBT with Reverse Blocking capability VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C VGE = 0/15 V; RG = 47 Ω; TVJ = 125°C RBSOA; Clamped inductive load; L = 100 µH 600 V TC = 25°C Maximum Ratings ± 1200 V ± 20 V 25 A 15 A 30 A 600 V 10 µs 300 W Symbol VCE(sat.

IXRA15N120 Features

* IGBT with NPT (non punch through) structure

* reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery

* positive temperature coefficient of saturation voltage

* Epo

IXRA15N120-IXYS.pdf