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IXSH24N60U1 Datasheet - IXYS Corporation

IXSH24N60U1 - HiPerFASTTM IGBT with Diode

HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.2 V 48 A 2.7 V Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg Test Conditions T J = 25 ° C to 150 ° C600 T J = 25 ° C to 150 ° C; R GE = 1 M W Continuous Transient TC = 25 ° C TC = 90 ° C TC = 25 ° C, 1 ms V GE= 15 V, T VJ = 125 ° C, R G = 10 W Clamped inductive load, L = 100 m H V GE= 15 V, V CE = 360 V, T J = 125 ° C, R G = 82

IXSH24N60U1 Features

* ms W °C °C °C °C °C

* International standard package JEDEC TO-247 AD

* High frequency IGBT and anti-parallel FRED in one package

* 2nd generation HDMOSTM process

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity

IXSH24N60U1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSH24N60U1

Manufacturer:

IXYS Corporation

File Size:

37.92 KB

Description:

Hiperfasttm igbt with diode.

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IXSH24N60U1 HiPerFASTTM IGBT with Diode IXYS Corporation