IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω T C = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55
IXSH15N120AU1_IXYSCorporation.pdf
Datasheet Details
Part number:
IXSH15N120AU1
Manufacturer:
IXYS Corporation
File Size:
61.50 KB
Description:
Igbt.