IXSH15N120AU1 Datasheet - IXYS Corporation

IXSH15N120AU1 IGBT

IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω T C = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 .

IXSH15N120AU1 Features

* High frequency IGBT with guaranteed Short Circuit SOA capability.

* IGBT with anti-parallel diode in one package

* 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications

* AC mo

IXSH15N120AU1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSH15N120AU1

Manufacturer:

IXYS Corporation

File Size:

61.50 KB

Description:

Igbt.

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