IXSH20N60B2D1 Datasheet - IXYS

IXSH20N60B2D1, High Speed IGBT

www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSH 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V .

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IXSH20N60B2D1_IXYS.pdf

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Datasheet Details

Part number:

IXSH20N60B2D1

Manufacturer:

IXYS

File Size:

613.39 KB

Description:

High Speed IGBT

Features

* µs W °C °C °C g °C °C
* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching

Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Welding Advantages
* High power density G TO-247 (IXSH) C E G = Gate E = Emitter C = Collector TAB = Collector Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5

IXSH20N60B2D1 Distributors

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IXSH20N60B2D1 High Speed IGBT IXYS

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