IXSH20N60B2D1 Datasheet - IXYS

IXSH20N60B2D1 High Speed IGBT

www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSH 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 1.

IXSH20N60B2D1 Features

* µs W °C °C °C g °C °C

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching

IXSH20N60B2D1 Datasheet (613.39 KB)

IXSH20N60B2D1 Datasheet Preview — Preview of IXSH20N60B2D1 PDF

Datasheet Details

Part number:

IXSH20N60B2D1

Manufacturer:

IXYS

File Size:

613.39 KB

Description:

High speed igbt.

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IXSH20N60B2D1 High Speed IGBT IXYS

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