* µs W °C °C °C g °C °C
* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching
IXSH20N60B2D1 Datasheet (613.39 KB)
IXSH20N60B2D1
IXYS
613.39 KB
High speed igbt.
www.DataSheet4U.com
High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 20N60B2D1
VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V
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