IXSH20N60B2D1 High Speed IGBT

IXYS

IXSH20N60B2D1 Description

www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSH 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V .

IXSH20N60B2D1 Features

* µs W °C °C °C g °C °C
* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching

IXSH20N60B2D1 Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Welding Advantages
* High power density G TO-247 (IXSH) C E G = Gate E = Emitter C = Collector TAB = Collector Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5

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Datasheet Details

Part number: IXSH20N60B2D1
Manufacturer: IXYS
File Size: 613.39 KB
Datasheet: IXSH20N60B2D1_IXYS.pdf
Description: High Speed IGBT

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High Speed IGBT IXYS

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