IXSH25N120A Datasheet - IXYS Corporation

IXSH25N120A IGBT

IGBT Improved SCSOA Capability IXSH25N120A IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms Maximum Ratings 1200 1200 ±20 ±30 50 25 80 ICM = 50 @ 0.8 VCES 10 200 -55 +150 150 -55 +150 V V V V TO-247AD G A A A A C E SSOA VGE = 15 V, TJ = 125°C, RG = 33 W (RBSOA) Clamped inductive load, L = 100 µH tsc PC TJ TJM TSTG Md Weight Max..

IXSH25N120A Features

* Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25°C TJ = 125

IXSH25N120A Datasheet (32.62 KB)