Datasheet Specifications
- Part number
- IXSH25N120A
- Manufacturer
- IXYS Corporation
- File Size
- 32.62 KB
- Datasheet
- IXSH25N120A_IXYSCorporation.pdf
- Description
- IGBT
Description
IGBT Improved SCSOA Capability IXSH25N120A IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM Test Conditions TJ =.
Features
* Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction lossesApplications
* 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25°C TJ = 125°C 8 200 1 + 100 4.0 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGEIXSH25N120A Distributors
📁 Related Datasheet
📌 All Tags