* Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity Applications 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25°C TJ = 125
IXSH25N120A Datasheet (32.62 KB)
IXSH25N120A
IXYS Corporation
32.62 KB
Igbt.
IGBT
Improved SCSOA Capability
IXSH25N120A IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
Test Conditions TJ =.
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