IXSH25N120A Datasheet, Igbt, IXYS Corporation

IXSH25N120A Features

• Igbt
• Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity Applications 1.15/10 6 300 Symbol Test

PDF File Details

Part number:

IXSH25N120A

Manufacturer:

IXYS Corporation

File Size:

32.62kb

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📄 Datasheet

Description:

Igbt.

IXSH25N120A Application

• Applications 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25°C

TAGS

IXSH25N120A

IXYS Corporation

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