* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching speeds up to 20 kHz A
IXSH10N60B2D1 Datasheet (631.02 KB)
IXSH10N60B2D1
IXYS
631.02 KB
High-speed igbt.
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25.
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