IXSH16N60U1 Datasheet - IXYS

IXSH16N60U1 IGBT

Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 150 W Clamped inductive load, L = 300 mH t SC (SCSOA) PC TJ TJM Tstg Weight V= GE 15 V, V CE = 360 V, T J = 125°C RG = 82 W, non re.

IXSH16N60U1 Features

* Latest generation HDMOSTM process

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast f

IXSH16N60U1-IXYS.pdf

IXSH16N60U1 Datasheet Preview — Preview of IXSH16N60U1 PDF

Datasheet Details

Part number:

IXSH16N60U1

Manufacturer:

IXYS

File Size:

36.42 KB

Description:

Igbt.

📁 Related Datasheet

IXSH10N60B2D1 High-Speed IGBT (IXYS)

IXSH15N120A IGBT (IXYS Corporation)

IXSH15N120AU1 IGBT (IXYS Corporation)

IXSH15N120B High-Voltage IGBT (IXYS)

IXSH15N120BD1 Improved SCSOA Capability (IXYS Corporation)

IXSH20N60 High Speed IGBT (IXYS)

IXSH20N60A High Speed IGBT (IXYS)

IXSH20N60B2D1 High Speed IGBT (IXYS)

TAGS

IXSH16N60U1 IXSH16N60U1 IGBT IXYS

IXSH16N60U1 Distributor