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IXSH16N60U1

IGBT

IXSH16N60U1 Features

* Latest generation HDMOSTM process

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast f

IXSH16N60U1 Datasheet (36.42 KB)

Preview of IXSH16N60U1 PDF

Datasheet Details

Part number:

IXSH16N60U1

Manufacturer:

IXYS

File Size:

36.42 KB

Description:

Igbt.
Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Cond.

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IXSH16N60U1 IGBT IXYS

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