IXSH16N60U1 Datasheet - IXYS

IXSH16N60U1 - IGBT

Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 150 W Clamped inductive load, L = 300 mH t SC (SCSOA) PC TJ TJM Tstg Weight V= GE 15 V, V CE = 360 V, T J = 125°C RG = 82 W, non re.

IXSH16N60U1 Features

* Latest generation HDMOSTM process

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast f

IXSH16N60U1-IXYS.pdf