IXSH15N120A Datasheet - IXYS Corporation

IXSH15N120A - IGBT

Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataSheet4U.com V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω TC = 25°C Maximum Ratin.

IXSH15N120A Features

* 2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications nd Max. Lead Temperature for Soldering (1.6mm from case for 10s)

* AC motor speed cont

IXSH15N120A_IXYSCorporation.pdf