IXSH15N120BD1, IXST15N120BD1 Datasheet - IXYS Corporation

IXSH15N120BD1, IXST15N120BD1, Improved SCSOA Capability

IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.

Features

* High Blocking Voltage
* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
* MOS gate turn-on for drive simplicity

Applications

* Mounting torque (TO-247) 1.13/10 Nm/lb. in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ

IXST15N120BD1_IXYSCorporation.pdf