IXSH15N120BD1, IXST15N120BD1 Datasheet - IXYS Corporation

IXSH15N120BD1 Improved SCSOA Capability

IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM.

IXSH15N120BD1 Features

* High Blocking Voltage

* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses

* MOS gate turn-on for drive simplicity

* Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10

IXST15N120BD1_IXYSCorporation.pdf