Datasheet4U Logo Datasheet4U.com

IXSH15N120BD1, IXST15N120BD1 - Improved SCSOA Capability

IXSH15N120BD1 Description

IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.

IXSH15N120BD1 Features

* High Blocking Voltage
* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
* MOS gate turn-on for drive simplicity

IXSH15N120BD1 Applications

* Mounting torque (TO-247) 1.13/10 Nm/lb. in. 300 260 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXSH15N120BD1, IXST15N120BD1. Please refer to the document for exact specifications by model.
datasheet Preview Page 2

Datasheet Details

Part number
IXSH15N120BD1, IXST15N120BD1
Manufacturer
IXYS Corporation
File Size
88.56 KB
Datasheet
IXST15N120BD1_IXYSCorporation.pdf
Description
Improved SCSOA Capability
Note
This datasheet PDF includes multiple part numbers: IXSH15N120BD1, IXST15N120BD1.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

Improved SCSOA Capability IXYS Corporation
IXYS Corporation IXSH15N120BD1-like datasheet