Description
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.
Features
* High Blocking Voltage
* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
* MOS gate turn-on for drive simplicity
Applications
* Mounting torque
(TO-247)
1.13/10 Nm/lb. in. 300 260 6 4
Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering (TO-268) Weight TO-247 TO-268
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ