IXSH15N120B Datasheet - IXYS

IXSH15N120B High-Voltage IGBT

HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 30 15 60 V= GE 15 V, T J = 125°C, R G = 10 W Clamped inductive load I = 40 CM @ 0.8 VCES TJ = 125°C, VGE = 720 V; V.

IXSH15N120B Features

* High Blocking Voltage

* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses

* MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications

* AC motor speed control

* DC

IXSH15N120B-IXYS.pdf