IXTH16P20 Datasheet (IXYS Corporation)

IXTH16P20, Standard Power MOSFET

Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.22 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -200 -200 ± 20 ± 30 -16 -64 -16 30 180 -55 +150 150 -55 +150 V V V V A A A mJ W °C °C °C °

IXTH16P20 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g

* Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (