* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g
* Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (
IXTH16P20 Datasheet (79.63 KB)
IXTH16P20
IXYS Corporation
79.63 KB
Standard power mosfet.
Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 16P20
VDSS ID25
RDS(on)
= -200 V = -16 A = 0.2.
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