IXTH16P60P - Power MOSFET
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings -.
IXTH16P60P Features
* z z z z
TO-247 (IXTH)
G
D
D (TAB) S D = Drain TAB = Drain
G = Gate S = Source
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247)
300 260 1.13 / 10 5 6
International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance