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IXTH50N20 Datasheet - IXYS Corporation

IXTH50N20 - MegaMOS FET

www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source,

IXTH50N20 Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2

IXTH50N20_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTH50N20

Manufacturer:

IXYS Corporation

File Size:

134.97 KB

Description:

Megamos fet.

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IXTH50N20 MegaMOS FET IXYS Corporation