* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2
IXTH50N20 Datasheet (134.97 KB)
IXTH50N20
IXYS Corporation
134.97 KB
Megamos fet.
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MegaMOSTMFET
IXTH 50N20 IXTM 50N20
VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS V.
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