IXTH50N20 MegaMOS FET

IXYS Corporation

Description

www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS V.

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Datasheet Specifications

Part number: IXTH50N20
Manufacturer: IXYS Corporation
File Size: 134.97 KB
Datasheet: IXTH50N20_IXYSCorporation.pdf
Description: MegaMOS FET

Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l VGS = 10 V, ID = 0.5 ID25 Pu

IXTH50N20 Distributors

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IXTH50N20 MegaMOS FET IXYS Corporation

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