* z International Standard Packages z Fast Intrinsic Diode z Dynamic dv/dt Rated z Avalanche Rated z Rugged PolarPTM Process z Low QG and Rds(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z
IXTH52P10P Datasheet (186.41 KB)
IXTH52P10P
IXYS Corporation
186.41 KB
P-channel mosfet.
PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P
TO-263 AA (IXTA)
TO-220AB (IXTP)
D
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