IXTH52P10P, IXTA52P10P Datasheet - IXYS Corporation

IXTH52P10P P-Channel MOSFET

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P TO-263 AA (IXTA) TO-220AB (IXTP) D G S D (Tab) GD S D (Tab) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings -100 V -100 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 52 A -130 A - 52 A .

IXTH52P10P Features

* z International Standard Packages z Fast Intrinsic Diode z Dynamic dv/dt Rated z Avalanche Rated z Rugged PolarPTM Process z Low QG and Rds(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z

IXTA52P10P-IXYSCorporation.pdf