IXTH50N30 Datasheet - INCHANGE

IXTH50N30 - N-Channel MOSFET

IXTH50N30 Features

* Drain Source Voltage- : VDSS= 300V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Power

Datasheet Details

IXTH50N30

INCHANGE

331.87 KB

N-channel mosfet.

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