* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1
IXTH5N100A Datasheet (104.20 KB)
IXTH5N100A
IXYS Corporation
104.20 KB
Standard power mosfet.
Standard Power MOSFET
VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V
ID25 5A 5A
RDS(on) 2.4 Ω 2.0 Ω
N-Channel Enhancement Mode
Symbol VD.
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