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IXTH5N100A Datasheet - IXYS Corporation

IXTH5N100A Standard Power MOSFET

Standard Power MOSFET VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V ID25 5A 5A RDS(on) 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 5 20 180 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) D G = Gate, S =.

IXTH5N100A Features

* l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1

IXTH5N100A_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTH5N100A

Manufacturer:

IXYS Corporation

File Size:

104.20 KB

Description:

Standard power mosfet.

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IXTH5N100A IXTH5N100A Standard Power MOSFET IXYS Corporation

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