IXTP55N075T Datasheet - IXYS Corporation

IXTP55N075T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5 V A mΩ TO-220 (IXTP) Symbol VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, .

IXTP55N075T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off

IXTP55N075T Datasheet (164.11 KB)