IXTP55N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP55N075T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 19.5mΩ@VGS=10V ·Fully characterized avalanche vo.
IXTP50N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP50N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 23mΩ@VGS=10V ·Fully characterized avalanche volt.
IXTP50N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTP50N085T IXTY50N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
IXTP50N20P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA50N20P IXTP50N20P IXTQ50N20P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
.
IXTP50N20P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP50N20P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage and c.
IXTP50N20PM - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTP50N20PM
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 60mΩ@V.