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IXTP5N60P PolarHV Power MOSFET

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Description

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E V.

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Datasheet Specifications

Part number
IXTP5N60P
Manufacturer
IXYS
File Size
684.10 KB
Datasheet
IXTP5N60P_IXYS.pdf
Description
PolarHV Power MOSFET

Features

* Characteristic Values Min. Typ. Max. z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 600 V V GS(th) V DS = V, GS I D = 50μA Advantages 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA z Easy to mount

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