IXTP56N15T Datasheet - IXYS

IXTP56N15T Power MOSFETs

TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± .

IXTP56N15T Features

* z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature High Current Handl

IXTP56N15T Datasheet (186.73 KB)