* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 50 µA IGSS VGS = ± 20 V, V
IXTP90N055T Datasheet (205.70 KB)
IXTP90N055T
IXYS Corporation
205.70 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA90N055T IXTP90N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
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