MWI50-12E7 Datasheet - IXYS Corporation

MWI50-12E7 Short Circuit SOA Capability Square RBSOA

www.DataSheet4U.com MWI 50-12 E7 MKI 50-12 E7 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 1 2 5 6 9 10 16 15 14 3 4 17 11 12 13 1 2 9 10 16 14 IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 1.9 V 3 4 17 7 8 11 12 MWI MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TV.

MWI50-12E7 Features

* NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current

MWI50-12E7 Datasheet (161.32 KB)