MWI100-12A8 Datasheet - IXYS

MWI100-12A8 IGBT Module

MWI 100-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 160 A VCES = 1200 V VCE(sat) typ. = 2.2 V 13, 21 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 1 2 3 4 14, 20 59 6 10 7 11 8 12 19 17 15 Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C 160 110 VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM =.

MWI100-12A8 Features

* €€NPT IGBT technology €€low saturation voltage €€low switching losses €€switching frequency up to 30 kHz €€square RBSOA, no latch up €€high short circuit capability €€positive temperature coefficient for easy parallelling €€MOS input, voltage controlled €€ultra fast free wheeling diodes €€solderable

MWI100-12A8-IXYS.pdf