MWI75-12A8 Datasheet (IXYS Corporation)

MWI75-12A8, IGBT

MWI 75-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 125 A = 1200 V VCES VCE(sat) typ.

= 2.2 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 125 85 ICM = 150 VCEK ≤ VCES 10 500 V V

MWI75-12A8 Features

* NPT IGBT technology

* low saturation voltage

* low switching losses

* switching frequency up to 30 kHz

* square RBSOA, no latch up

* high short circuit capability

* positive temperature coefficient for easy parallelling

* MOS input, v