MWI75-12E8 Datasheet (IXYS Corporation)

MWI75-12E8, IGBT

MWI 75-12 E8 MKI 75-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 130 A VCES = 1200 V VCE(sat) typ.

= 2.0 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 59 6 10 7 11 8 12 MWI 13, 21 1 2 19 17 15 3 4 14, 20 9 10 11 12 MKI 19 15 Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω;

MWI75-12E8 Features

* NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current