MWI100-12E8 Datasheet - IXYS

MWI100-12E8 IGBT Modules

MWI 100-12 E8 MKI 100-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 13, 21 1 2 9 10 19 15 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 4 14, 20 7 8 MWI 11 12 3 4 14, 20 11 12 MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 12 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ .

MWI100-12E8 Features

* NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits

* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current

MWI100-12E8 Datasheet (162.66 KB)