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22N55 IXFH22N55

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Description

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr IXFH 22N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.27 .

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Datasheet Specifications

Part number
22N55
Manufacturer
IXYS
File Size
67.64 KB
Datasheet
22N55-IXYS.pdf
Description
IXFH22N55

Features

* International standard packages JEDEC TO-247 AD
* Low R HDMOSTM process DS (on)
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (< 5 nH) - easy to drive and to protect
* Fast intrinsic Rec

Applications

* Power Factor Control Circuits
* Uninterruptible Power Supplies (UPS)
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Advantages
* Easy to mount

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