22N55 Datasheet - IXYS

22N55 IXFH22N55

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr IXFH 22N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg TL M d Weight Symbol V DSS VGS(th) I GSS I DSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,.

22N55 Features

* International standard packages JEDEC TO-247 AD

* Low R HDMOSTM process DS (on)

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance (< 5 nH) - easy to drive and to protect

* Fast intrinsic Rec

22N55-IXYS.pdf