DSEA29-06AC Datasheet - IXYS

DSEA29-06AC, HiPerDynFRED Epitaxial Diode ISOPLUS220

DSEA 29-06AC DSEC 29-06AC www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220 TM Electrically Isolated Back Surface Preliminary Data Sheet.

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DSEA29-06AC_IXYS.pdf

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Datasheet Details

Part number:

DSEA29-06AC

Manufacturer:

IXYS

File Size:

545.67 KB

Description:

HiPerDynFRED Epitaxial Diode ISOPLUS220

Features

* l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical 95 2500 1165 / 2.515 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (

Applications

* l l Symbol IR c Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.34 2.03 1.6 0.6 µA mA V V K/W K/W ns 4.9 A l l l VF d RthJC RthCH trr IRM l l l Antiparallel diode for high frequency switching devices Antisatur

DSEA29-06AC Distributors

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DSEA29-06AC HiPerDynFRED Epitaxial Diode ISOPLUS220 IXYS

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