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DSEA29-06AC HiPerDynFRED Epitaxial Diode ISOPLUS220

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Description

DSEA 29-06AC DSEC 29-06AC www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220 TM Electrically Isolated Back Surface Preliminary Data Sheet.

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Datasheet Specifications

Part number
DSEA29-06AC
Manufacturer
IXYS
File Size
545.67 KB
Datasheet
DSEA29-06AC_IXYS.pdf
Description
HiPerDynFRED Epitaxial Diode ISOPLUS220

Features

* l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical 95 2500 1165 / 2.515 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (

Applications

* l l Symbol IR c Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.34 2.03 1.6 0.6 µA mA V V K/W K/W ns 4.9 A l l l VF d RthJC RthCH trr IRM l l l Antiparallel diode for high frequency switching devices Antisatur

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