DSEA59-06BC Datasheet - IXYS

DSEA59-06BC Epitaxial Diode

HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet DSEA VRSM V 600 VRRM V 600 Type DSEA 59-06BC DSEC 59-06BC 1 DSEC 2 3 Symbol IFRMSc IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Symbol IR d VF e RthJC RthCH trr IRM Conditions Lead current limit TC = 105°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5 VR typical; f = 10 kHz; repetitive 1.6 mm (0.063 i.

DSEA59-06BC Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance (

DSEA59-06BC-IXYS.pdf