* l 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 260 50 2500 1165 / 2.515 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (
DSEA16-06AC Datasheet (735.27 KB)
DSEA16-06AC
IXYS Corporation
735.27 KB
(dsea16-06ac / dsec16-06ac) hiperdynfredtm epitaxial diode isoplus220tm.
www.DataSheet4U.com
ADVANCE TECHNICAL INFORMATION
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
DSEA
IFAV VRRM trr.
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