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DSEl30 Fast Recovery Epitaxial Diode

DSEl30 Description

www.DataSheet4U.com Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 26 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type A C TO-2.

DSEl30 Features

* q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery

DSEl30 Applications

* q q q q 138 0.81.2 6 q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 30 A; Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber

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Datasheet Details

Part number
DSEl30
Manufacturer
IXYS
File Size
331.87 KB
Datasheet
DSEl30_IXYS.pdf
Description
Fast Recovery Epitaxial Diode

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Fast Recovery Epitaxial Diode IXYS
IXYS DSEl30-like datasheet