DSEl30 Datasheet (IXYS) - Fast Recovery Epitaxial Diode

DSEl30, Fast Recovery Epitaxial Diode

www.DataSheet4U.com Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 26 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type A C TO-247 AD C DSEI 30-12A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 26 375 200 210 185 195 200 180 170 160 -40+150 150 -40+150 A A A A A A

DSEl30 Features

* q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery