G1000LL250 Datasheet (209.36 KB)
G1000LL250
IXYS
209.36 KB
Anode-shorted gate turn-off thyristor.
Date:- 18 Feb, 2004 Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250
Absolute Maximum Ratings
VDRM VRSM VRRM VDC-link
VO.
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G1002 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G1002
N-Channel Enhancement Mode Power MOSFET
Description
The G1002 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. .
G1003A - N-Channel Enhancement Mode Power MOSFET
(GFD)
G1003A
N-Channel Enhancement Mode Power MOSFET
Description
The G1003A uses advanced trench technology to provide
excellent RDS(ON) , low gate charge.
