G1006A Datasheet, Mosfet, GOFORD

G1006A Features

• Mosfet
• VDSS RDS(ON) ID @10V (Typ) 100V 140 mΩ 6A
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• E

PDF File Details

Part number:

G1006A

Manufacturer:

GOFORD

File Size:

2.90MB

Download:

📄 Datasheet

Description:

N-channel mosfet. The G1006A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

G1006A Application

• Applications It is ESD protected. General Features
• VDSS RDS(ON) ID @10V (Typ) 100V 140 mΩ 6A
• High density cell design fo

TAGS

📁 Related Datasheet

G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Absolute Maximum Ratings VDRM VRSM VRRM VDC-link VO.

G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Absolute Maximum Ratings VDRM VRSM VRRM VDC-link VO.

G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 28 Oct-04 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type G1000NC450 Absolute Maximum Ratings VDRM.

G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 16 Jun-04 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type G1000NL450 Absolute Maximum Ratings VDRM.

G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 2 Aug, 2011 Data Sheet Issue:- A1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC250 Absolute .

G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 31 Jan, 2008 Data Sheet Issue:- 1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC.

G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 31 Jan, 2008 Data Sheet Issue:- 1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC.

G1002 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G1002 N-Channel Enhancement Mode Power MOSFET Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. .

G1003A - N-Channel Enhancement Mode Power MOSFET (GFD)
G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G1003B - N-Channel MOSFET (GOFORD)
GOFORD G1003B General Description The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate v.