Datasheet4U Logo Datasheet4U.com

G1003B - N-Channel MOSFET

G1003B Description

GOFORD G1003B General .
The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

G1003B Features

* VDSS RDS(ON) RDS(ON) ID @10V (Typ) @ 4.5V(Typ) 100V 135 mΩ 145mΩ 5A
* High Power and current handing capability
* RoHS Compliant

📥 Download Datasheet

Preview of G1003B PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
G1003B
Manufacturer
GOFORD
File Size
1.96 MB
Datasheet
G1003B-GOFORD.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • G1003A - N-Channel Enhancement Mode Power MOSFET (GFD)
  • G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

📌 All Tags

N-Channel MOSFET GOFORD
GOFORD G1003B-like datasheet