G10N03 Datasheet, Mosfet, GOFORD

G10N03 Features

  • Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power sw

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Part number:

G10N03

Manufacturer:

GOFORD

File Size:

683.33kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of appl

Datasheet Preview: G10N03 📥 Download PDF (683.33kb)
Page 2 of G10N03 Page 3 of G10N03

G10N03 Application

  • Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanch

TAGS

G10N03
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

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Stock and price

Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
DigiKey
G10N03S
3500 In Stock
Qty : 2000 units
Unit Price : $0.16
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