IX4351NE 9A Low Side SiC MOSFET/IGBT

IXYS

Description

INTEGRATED CIRCUITS DIVISION .
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

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Datasheet Specifications

Part number: IX4351NE
Manufacturer: IXYS
File Size: 325.83 KB
Datasheet: IX4351NE-IXYS.pdf
Description: 9A Low Side SiC MOSFET/IGBT

Features

* Separate 9A peak source and sink outputs
* Operating Voltage Range: -10V to +25V
* Internal charge pump regulator for selectable negative gate drive bias
* Desaturation detection with soft shutdown sink driver
* TTL and CMOS compatible input
* Under

Applications

* Driving SiC MOSFETs and IGBTs
* On-board charger and DC charging station
* Industrial inverters
* PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 VDD 4.6V Regulator SET 9 Charge Pump Control VDD 6.8

IX4351NE Distributors

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IX4351NE Low Side SiC MOSFET IGBT IXYS

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