Datasheet Details
- Part number
- IX4351NE
- Manufacturer
- IXYS
- File Size
- 325.83 KB
- Datasheet
- IX4351NE-IXYS.pdf
- Description
- 9A Low Side SiC MOSFET/IGBT
IX4351NE Description
INTEGRATED CIRCUITS DIVISION .
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.
IX4351NE Features
* Separate 9A peak source and sink outputs
* Operating Voltage Range: -10V to +25V
* Internal charge pump regulator for selectable
negative gate drive bias
* Desaturation detection with soft shutdown sink driver
* TTL and CMOS compatible input
* Under
IX4351NE Applications
* Driving SiC MOSFETs and IGBTs
* On-board charger and DC charging station
* Industrial inverters
* PFC, AC/DC and DC/DC converters
IX4351 Functional Block Diagram
IN 6 FAULT 5
Gate and Control Logic
VREG 8
VDD
4.6V Regulator
SET 9
Charge Pump Control
VDD
6.8
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