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IX4351NE Datasheet - IXYS

IX4351NE - 9A Low Side SiC MOSFET/IGBT

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.

An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/

IX4351NE Features

* Separate 9A peak source and sink outputs

* Operating Voltage Range: -10V to +25V

* Internal charge pump regulator for selectable negative gate drive bias

* Desaturation detection with soft shutdown sink driver

* TTL and CMOS compatible input

* Under

IX4351NE-IXYS.pdf

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Datasheet Details

Part number:

IX4351NE

Manufacturer:

IXYS

File Size:

325.83 KB

Description:

9a low side sic mosfet/igbt.

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