IX4351NE - 9A Low Side SiC MOSFET/IGBT
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.
Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/
IX4351NE Features
* Separate 9A peak source and sink outputs
* Operating Voltage Range: -10V to +25V
* Internal charge pump regulator for selectable negative gate drive bias
* Desaturation detection with soft shutdown sink driver
* TTL and CMOS compatible input
* Under
