IX4351NE Datasheet - IXYS

IX4351NE 9A Low Side SiC MOSFET/IGBT

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/.

IX4351NE Features

* Separate 9A peak source and sink outputs

* Operating Voltage Range: -10V to +25V

* Internal charge pump regulator for selectable negative gate drive bias

* Desaturation detection with soft shutdown sink driver

* TTL and CMOS compatible input

* Under

IX4351NE-IXYS.pdf