IXDT30N120, IXDH30N120 Datasheet - IXYS

IXDT30N120 High Voltage IGBT

High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA G IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 C G C VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V TO-247 AD (IXDH) E IXDH 30N120 IXDT 30N120 E IXDH 30N120 D1 IXDT 30N120 D1 G C E C (TAB) TO 268 AA (IXDT) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque Conditions TJ = .

IXDT30N120 Features

* q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space

IXDH30N120_IXYS.pdf