* q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space
IXDT30N120 Datasheet (108.26 KB)
IXDT30N120
IXYS
108.26 KB
High voltage igbt.
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
G
IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1
C G C
VCES =.
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